Title :
Ultra-Low Power Hybrid CMOS-Magnetic Logic Architecture
Author :
Das, Jayita ; Alam, Syed M. ; Bhanja, Sanjukta
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
Dipolar magnetic coupling between single layer nanomagnets is used in nanomagnetic logic (NML). Apart from writing and reading, nanomagnets are also clocked using external magnetic fields generated by current carrying wires. The related current ranges in mA and consumes large power. Also, the fields cannot sharply terminate at boundaries between nanomagnets that are required to be in different clock zones. The above concerns motivated us to look into alternate magnetic devices to realize magnetic logic. We therefore suggested miltilayer magnetic tunnel junctions (MTJs) for logic. We have observed that MTJ free layers can interact with their neighbors through magnetic coupling. In this paper we have proposed use of this coupling for effective logic computation. MTJs are also CMOS friendly, a property that we used to write, clock and read from logic. CMOS integration also improves control over individual elements in logic. In this paper we have used these properties to present a novel CMOS-MTJ integrated architecture that: a) computes logic using magnetic coupling between MTJs and b) writes, clocks and reads from logic using spin transfer torque (STT) current that is more energy efficient. A feasibility study of this CMOS-MTJ integration in 22 nm CMOS technology node is also presented. The proposed architecture achieves an energy reduction >;95% in adders and multipliers when compared to traditional designs using single layer nanomagnets.
Keywords :
CMOS integrated circuits; low-power electronics; magnetic logic; magnetic tunnelling; nanomagnetics; dipolar magnetic coupling; miltilayer magnetic tunnel junctions; nanomagnetic logic; single layer nanomagnets; spin transfer torque current; ultra-low power hybrid CMOS-magnetic logic architecture; CMOS integrated circuits; Clocks; Computer architecture; Couplings; Magnetic tunneling; Microprocessors; Transistors; 22 nm CMOS integration; Low power; MTJ; STT clock; STT write; TMR based differential read; nanomagnetic logic; spin transfer torque; variability tolerant;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2012.2185311