• DocumentCode
    1273587
  • Title

    Low temperature dependence of the hole impact ionisation constants determined from PMOS transistors

  • Author

    Deen, M.J.

  • Author_Institution
    Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
  • Volume
    26
  • Issue
    23
  • fYear
    1990
  • Firstpage
    1975
  • Lastpage
    1977
  • Abstract
    Results on the variation of the hole impact ionisation constants Ai and Bi with temperature are presented. Ai and Bi were determined using a substrate current model for MOS devices. It was found that for the PMOS devices, Ai and Bi both decrease with temperature.
  • Keywords
    impact ionisation; insulated gate field effect transistors; semiconductor device models; PMOS transistors; hole impact ionisation constants; low temperature operation; p-channel MOSFETs; scaling; substrate current model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901277
  • Filename
    59542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1273587