Title :
5 Gbit/s 2:1 multiplexer fabricated in 0.35 μm CMOS and 3 Gbit/s 1:2 demultiplexer fabricated in 0.5 μm CMOS technology
Author :
Runge, K. ; Thomas, P.B.
Author_Institution :
Rockwell Sci. Center, Thousand Oaks, CA, USA
fDate :
9/16/1999 12:00:00 AM
Abstract :
The 5 Gbit/s 2:1 multiplexer is fabricated in 0.35 μm CMOS and the 3 Gbit/s 1:2 demultiplexer is fabricated in 0.5 μm CMOS technology The authors have designed two dynamic CMOS circuits (based on dynamic transmission gate logic), a 5 Gbit/s 2:1 multiplexer and a 3 Gbit/s 1:2 demultiplexer, which can be used in the place of their counterpart CML circuits. Both circuits feature front-end amplification to convert CML levels to CMOS logic swings, and open drain output drivers with CML levels into 50 Ω
Keywords :
CMOS logic circuits; demultiplexing equipment; driver circuits; multiplexing equipment; 0.35 micron; 0.5 micron; 1:2 demultiplexer; 2:1 multiplexer; 3 Gbit/s; 5 Gbit/s; CML levels; CMOS; CMOS logic swings; dynamic CMOS circuits; dynamic transmission gate logic; front-end amplification; open drain output drivers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991105