• DocumentCode
    1273923
  • Title

    5 Gbit/s 2:1 multiplexer fabricated in 0.35 μm CMOS and 3 Gbit/s 1:2 demultiplexer fabricated in 0.5 μm CMOS technology

  • Author

    Runge, K. ; Thomas, P.B.

  • Author_Institution
    Rockwell Sci. Center, Thousand Oaks, CA, USA
  • Volume
    35
  • Issue
    19
  • fYear
    1999
  • fDate
    9/16/1999 12:00:00 AM
  • Firstpage
    1631
  • Lastpage
    1633
  • Abstract
    The 5 Gbit/s 2:1 multiplexer is fabricated in 0.35 μm CMOS and the 3 Gbit/s 1:2 demultiplexer is fabricated in 0.5 μm CMOS technology The authors have designed two dynamic CMOS circuits (based on dynamic transmission gate logic), a 5 Gbit/s 2:1 multiplexer and a 3 Gbit/s 1:2 demultiplexer, which can be used in the place of their counterpart CML circuits. Both circuits feature front-end amplification to convert CML levels to CMOS logic swings, and open drain output drivers with CML levels into 50 Ω
  • Keywords
    CMOS logic circuits; demultiplexing equipment; driver circuits; multiplexing equipment; 0.35 micron; 0.5 micron; 1:2 demultiplexer; 2:1 multiplexer; 3 Gbit/s; 5 Gbit/s; CML levels; CMOS; CMOS logic swings; dynamic CMOS circuits; dynamic transmission gate logic; front-end amplification; open drain output drivers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991105
  • Filename
    807036