Title :
40-Gb/s ICs for future lightwave communications systems
Author :
Otsuji, Taiichii ; Imai, Yuhki ; Sano, Eiichi ; Kimura, Shunji ; Yamaguchi, Satoshi ; Yoneyama, Mikio ; Enoki, Takatomo ; Umeda, Yohtaro
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
fDate :
9/1/1997 12:00:00 AM
Abstract :
This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-μm gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 10 Gb/s
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; demultiplexing equipment; digital communication; distributed amplifiers; field effect analogue integrated circuits; field effect digital integrated circuits; flip-flops; gallium arsenide; indium compounds; integrated circuit packaging; multiplexing equipment; optical communication equipment; optical fibre communication; time division multiplexing; wavelength division multiplexing; wideband amplifiers; 0.1 micron; 10 Gbit/s; IC fabrication; InAlAs-InGaAs; InAlAs-InGaAs HEMTs; InP; InP recess etch stopper; TDM; WDM; amplifying operation; analog ICs; circuit design; data-multiplexing; demultiplexing; digital ICs; high electron mobility transistors; lightwave communications systems; packaging technologies; Bit rate; Circuits; Demultiplexing; HEMTs; Optical amplifiers; Optical receivers; Optical transmitters; Packaging; WDM networks; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
