Wide-band millimeter wave characterization of sub-0.2 micrometer gate-length AlInAs/GaInAs HEMTs

Author

Matloubian, Mehran ; Rosenbaum, Steven E. ; Fetterman, Harold R. ; Greiling, Paul T.

Volume

1

Issue

2

fYear

1991

Firstpage

32

Lastpage

34

Abstract

The S-parameters of an AlInAs/GaInAs high electron mobility transistor (HEMT) were measured using a picosecond optoelectronic system over a bandwidth of 100 GHz. These picosecond optoelectronic measurements were validated by comparing low-frequency measurements to those obtained using an on-wafer RF probes/vector network analyzer, and W-band results to measurements conducted using a waveguide-to-microstrip transition/vector network analyzer frequency extender. This is the widest bandwidth of measured S-parameters reported on a single transistor.<>

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave measurement; semiconductor device testing; solid-state microwave devices; 0.2 micron; AlInAs-GaInAs; HEMT; S-parameters; W-band; high electron mobility transistor; millimeter wave characterization; picosecond optoelectronic measurements; wideband MM-wave characterisation; Bandwidth; Frequency measurement; Gain measurement; HEMTs; MODFETs; Millimeter wave measurements; Millimeter wave transistors; Radio frequency; Scattering parameters; Wideband;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.80704

Filename

80704