Title :
52 GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105 V/W
Author :
Takahata, K. ; Muramoto, Y. ; Fukano, H. ; Matsuoka, Y.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
9/16/1999 12:00:00 AM
Abstract :
A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105 V/W and a 3 dB-down bandwidth of 52 GHz, which is the largest bandwidth for any integrated photoreceiver reported to date
Keywords :
HEMT integrated circuits; MOCVD; distributed amplifiers; integrated optoelectronics; optical receivers; p-i-n photodiodes; photolithography; vapour phase epitaxial growth; 1.55 mum; 3 dB-down bandwidth; 52 GHz; HEMT loss-compensated distributed amplifier; large O/E conversion factor; long-wavelength monolithic photoreceiver; monolithically integrated WGPD/HEMT photoreceiver; multimode waveguide pin photodiode; photolithography; receiver OEIC; single-step epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991118
