Title :
High power CW operation of InGaAsN lasers at 1.3 μm
Author :
Egorov, A.Yu. ; Bernklau, D. ; Livshits, D. ; Ustinov, V. ; Alferov, Zh.I. ; Riechert, H.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
9/16/1999 12:00:00 AM
Abstract :
Room temperature, continuous-wave operation at 1.3 μm is reported for InGaAsN triple quantum well lasers. The layers were grown by MBE using an RF-coupled plasma source for nitrogen. Large broad area lasers exhibit very low threshold current density down to 680 A/cm2 and a slope efficiency of 0.59 W/A (output per two facets). Maximum output powers of 2.4 and 4 W are reached at 10°C under CW and pulsed operation, respectively. These values are a significant improvement over those previously published for lasers in the InGaAsN material system
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; quantum well lasers; 1.3 mum; 10 C; 2.4 W; 4 W; CW operation; InGaAsN; InGaAsN lasers; InGaAsN material system; MBE; RF-coupled plasma source; high power CW operation; large broad area lasers; maximum output powers; pulsed operation; room temperature continuous-wave operation; slope efficiency; threshold current density; triple quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991109
