Title :
A voltage tunable 35 GHz monolithic GaAs FECTED oscillator
Author :
Lübke, K. ; Scheiber, H. ; Thim, H.
Author_Institution :
Johannes Kepler Univ., Linz, Austria
Abstract :
Monolithically integrated FECTED (field-effect controlled transferred electron device) oscillators have been fabricated with high yield, high reliability, and precise frequency control. With unoptimized circuits, 12 mW with 1.4% efficiency in CW (continuous wave) operation and 25 mW with 2% efficiency in pulsed operation have been obtained. These results represent the highest power output and efficiency yet for monolithic TED and FET oscillator in this frequency range.<>
Keywords :
Gunn devices; III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave oscillators; tuning; variable-frequency oscillators; 12 mW; 2 percent; 25 mW; 35 GHz; CW operation; EHF; FECTED oscillator; FET; GaAs; MM-wave type; TED; VCO; VFO; field-effect controlled; frequency control; high reliability; high yield; millimetre wave region; monolithic oscillator; pulsed operation; transferred electron device; voltage tunable; Circuits; Dielectrics; Electrons; FETs; Frequency; Gallium arsenide; Gunn devices; MMICs; Voltage; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
