Title :
Effect of interdiffusion on dark current response of GaInP/GaAs quantum well infrared photodetectors
Author :
Micallef, J. ; Brincat, A.
Author_Institution :
Dept. of Microelectron., Malta Univ., Malta
fDate :
9/16/1999 12:00:00 AM
Abstract :
The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved
Keywords :
III-V semiconductors; chemical interdiffusion; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; quantum well devices; semiconductor quantum wells; Ga0.51In0.49P-GaAs; GaInP/GaAs QWIP; GaInP/GaAs quantum well infrared photodetectors; abrupt carrier confinement profile; barrier height; dark current response; group-III-only interdiffusion; interdiffusion effect; peak detection wavelength tuning; quantum well intersubband infrared photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991113
