Title :
A highly integrated multifunction macro synthesizer chip (MMSC) for applications in 2-18 GHz synthesized sources
Author :
Mondal, J. ; Peterson, K. ; Wong, K. ; Vu, K. ; Consolazio, S. ; Geske, S. ; Blubaugh, J. ; Guthrie, W. ; Dietz, G. ; Haubenstricker, R. ; Fudem, H. ; Moghe, S.
Author_Institution :
Northrop Grumman Corp., Rolling Meadows, IL, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
A highly integrated monolithic microwave integrated circuit (MMIC) that acts as the core of the RF section of a synthesized source is developed using commercially available 0.2-μm pseudomorphic high electron mobility transistor (PHEMT) technology. Measured performance is shown up to 18 GHz. The same system architecture is able to produce synthesized output through 40 GHz with modifications of some critical building blocks of the chip. The chip performs all the frequency selection and tuning functions. It has more than 30 RF blocks integrated on an area of 4.27×4.68 mml. Some individual blocks operate through 40 GHz
Keywords :
HEMT integrated circuits; circuit tuning; field effect MMIC; frequency synthesizers; 0.2 micron; 2 to 18 GHz; 40 GHz; MMIC; PHEMT technology; RF section; frequency selection functions; monolithic microwave integrated circuit; multifunction macro synthesizer chip; pseudomorphic HEMT; synthesized sources; tuning functions; Electron mobility; HEMTs; Integrated circuit synthesis; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Radio frequency; Radiofrequency integrated circuits; Synthesizers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
