A highly integrated multifunction macro synthesizer chip (MMSC) for applications in 2-18 GHz synthesized sources

Author

Mondal, J. ; Peterson, K. ; Wong, K. ; Vu, K. ; Consolazio, S. ; Geske, S. ; Blubaugh, J. ; Guthrie, W. ; Dietz, G. ; Haubenstricker, R. ; Fudem, H. ; Moghe, S.

Author_Institution

Northrop Grumman Corp., Rolling Meadows, IL, USA

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1405

Lastpage

1409

Abstract

A highly integrated monolithic microwave integrated circuit (MMIC) that acts as the core of the RF section of a synthesized source is developed using commercially available 0.2-μm pseudomorphic high electron mobility transistor (PHEMT) technology. Measured performance is shown up to 18 GHz. The same system architecture is able to produce synthesized output through 40 GHz with modifications of some critical building blocks of the chip. The chip performs all the frequency selection and tuning functions. It has more than 30 RF blocks integrated on an area of 4.27×4.68 mml. Some individual blocks operate through 40 GHz

Keywords

HEMT integrated circuits; circuit tuning; field effect MMIC; frequency synthesizers; 0.2 micron; 2 to 18 GHz; 40 GHz; MMIC; PHEMT technology; RF section; frequency selection functions; monolithic microwave integrated circuit; multifunction macro synthesizer chip; pseudomorphic HEMT; synthesized sources; tuning functions; Electron mobility; HEMTs; Integrated circuit synthesis; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Radio frequency; Radiofrequency integrated circuits; Synthesizers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628751

Filename

628751