Title :
High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode
Author :
Fukano, H. ; Muramoto, Y. ; Takahata, K. ; Matsuoka, Y.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
9/16/1999 12:00:00 AM
Abstract :
A high-efficiency uni-travelling carrier (UTC) photodiode has been developed which employs an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD shows a maximum responsivity of 0.48 A/W even with an absorption layer as thin as 280 nm, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodiodes; 1.5 V; 280 nm; 40 Gbit/s; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; absorption layer; edge-illuminated refracting-facet photodiode; edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode; high output peak-to-peak voltage; high-efficiency uni-travelling carrier photodiode; maximum responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991148
