• DocumentCode
    1274093
  • Title

    High power 4.6 μm LEDs for CO detection grown by LPE

  • Author

    Krier, A. ; Gao, H. ; Sherstnev, V. ; Yakovlev, Y.

  • Author_Institution
    Dept. of Phys., Lancaster Univ., UK
  • Volume
    35
  • Issue
    19
  • fYear
    1999
  • fDate
    9/16/1999 12:00:00 AM
  • Firstpage
    1665
  • Lastpage
    1667
  • Abstract
    High-power light-emitting diodes operating at 4.6 μm with potential for use in an optical carbon monoxide sensor have been fabricated by liquid phase epitaxy (LPE) with a pulsed output power in excess of 1 mW at room temperature. The InAs0.89Sb0.11 in the LED active region was purified using rare earth ion gettering of the growth solution during epitaxy
  • Keywords
    III-V semiconductors; gas sensors; getters; indium compounds; light emitting diodes; liquid phase epitaxial growth; optical sensors; semiconductor growth; 1 mW; 4.6 mum; CO; CO detection; InAs0.89Sb0.11; LED active region; LPE growth; growth solution; high-power LEDs; liquid phase epitaxy; optical CO sensor; pulsed output power; purification; rare earth ion gettering; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991142
  • Filename
    807059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1274093