Title :
Optical sampling by ultra-fast high-contrast saturable absorber created by heavy ion irradiation
Author :
Collin, S. ; Ramos, J. ; Lopez, J. ; Mangeney, J. ; Stelmakh, N.
Author_Institution :
Inst. d´´Electron. Fondamentale, Orsay, France
fDate :
9/16/1999 12:00:00 AM
Abstract :
A 4ps high-sensitivity optical sampling scheme based on a fast GaAs saturable absorber created by heavy-ion irradiation is demonstrated. The intensity-invariant saturable absorber permits high-level inhomogeneous pumping leading to a high open/close ratio of 1000 and to a system sensitivity limited by the level of saturable absorber spontaneous emission
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; ion beam effects; laser mode locking; optical saturable absorption; optical variables measurement; pulse measurement; signal sampling; spontaneous emission; 4 ps; GaAs; GaAs saturable absorber; heavy-ion irradiation; high open/close ratio; high-level inhomogeneous pumping; high-sensitivity optical sampling scheme; intensity-invariant saturable absorber; modelocked laser diode; saturable absorber spontaneous emission; ultra-fast high-contrast saturable absorber; ultrashort optical pulse measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991066
