Title :
0.1 μm high performance metamorphic In0.32Al0.68 As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
Author :
Zaknoune, M. ; Cordier, Y. ; Bollaert, S. ; Ferre, D. ; Théron, D. ; Crosnier, Y.
Author_Institution :
CNRS, Villeneuve d´´Ascq, France
fDate :
9/16/1999 12:00:00 AM
Abstract :
In0.32Al0.68As/In0.33Ga0.67 As HEMT structures were grown by molecular beam epitaxy (MBE) on GaAs substrates. An inverse step metamorphic buffer (IS) was used to reach a relaxation rate close to 98% and a mean cross-hatch of 2 nm. This structure, which has a gate length of 0.1 μm, exhibits a peak transconductance of 750 mS/mm and a current density of 650 mA/mm. A current gain cutoff frequency Ft of 160 GHz and a maximum oscillation frequency Fmax of 400 GHz were also obtained. These results clearly demonstrate the good electron transport properties due to the high relaxation rate and the good filtering of dislocations
Keywords :
III-V semiconductors; aluminium compounds; carrier relaxation time; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device measurement; semiconductor growth; 0.1 mum; 160 GHz; 400 GHz; 750 mS/mm; GaAs; GaAs substrates; In0.32Al0.68As-In0.33Ga0.67 As; In0.32Al0.68As/In0.33Ga0.67 As HEMT structures; MBE; T-gate metamorphic HEMT; current density; current gain cutoff frequency; dislocation filtering; electron transport properties; gate length; inverse step metamorphic buffer; maximum oscillation frequency; mean cross-hatch; molecular beam epitaxy; peak transconductance; relaxation rate close;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991030
