Title :
InAlGaAs fully quaternary doped-channel FETs recessed by CHF3 +BCl3 reactive ion etching
Author :
Lai, Li-Shyue ; Kao, Hung-Chung ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/16/1999 12:00:00 AM
Abstract :
InAlGaAs fully quaternary heterostructure doped-channel FETs recessed by CHF3+BCl3 reactive ion etching have been fabricated. The etching selectivity was optimised by adjusting the flow rate ratio of this gas mixture. The device demonstrated good DC and microwave characteristics with a uniform distribution of threshold voltages, which illustrated the advantages of the RIE-recess process
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; semiconductor device measurement; sputter etching; 16 GHz; 47 GHz; BCl3; CHF3/BCl3 reactive ion etching; DC characteristics; InAlGaAs; InAlGaAs fully quaternary doped-channel FETs; InAlGaAs fully quaternary heterostructure doped-channel FETs; RF measurements; RIE-recess process; device reproducibility; device uniformity; device yield; etching selectivity; flow rate ratio; microwave characteristics; threshold voltage distribution; trifluoromethane;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990905
