DocumentCode
1274145
Title
Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regia
Author
Kim, Jong Kyu ; Lee, Jong-Lam ; Lee, Jae Won ; Park, Yong Jo ; Taeil Kim
Author_Institution
Dept. of Mater. Sci. & Eng., Pohang Inst. of Sci. & Technol., South Korea
Volume
35
Issue
19
fYear
1999
fDate
9/16/1999 12:00:00 AM
Firstpage
1676
Lastpage
1678
Abstract
A low transparent ohmic contact on p-type GaN has been achieved through the deposition of Pt on p-type GaN treated using boiling aqua regia. The contact resistivity was decreased from 4.7×10-1 to 1.4×10-4 Ωcm2 by the surface treatment. The drastic reduction in contact resistivity originates from both the removal of surface oxides by the boiling aqua regia and the high work function of Pt. The surface treatment plays a role in reducing the barrier height for holes at the Pt/p-type GaN interface, leading to good ohmic contacts on p-type GaN
Keywords
III-V semiconductors; contact resistance; gallium compounds; ohmic contacts; platinum; semiconductor-metal boundaries; surface treatment; transparency; wide band gap semiconductors; work function; GaN; I-V characteristics; Pt-GaN; Pt/GaN low transparent ohmic contact; XPS; aqua regia; boiling aqua regia; contact resistivity; hole barrier height; surface oxide removal; surface treatment; work function;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991099
Filename
807066
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