Low-resistance ohmic contacts for microwave and lightwave devices

Author

Verlangieri, P.A. ; Kuznetsov, M. ; Schneider, M.V.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

1

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

51

Lastpage

53

Abstract

The fabrication of low-resistance ohmic contacts to n- and p-type compound semiconductor layers is reported. Each contact consists of a five-layer structure of evaporated metal that is alloyed at a critical temperature. Measurements of the alloyed contacts showed resistances in the 10/sup -7/- Omega -cm/sup 2/ range, which is lower than previously obtained results from conventional three-layer metallization systems produced by evaporation of an appropriate eutectic alloy. The morphology of the contacts was excellent, with good linewidth control and completely reproducible results, which makes them useful for fabricating high-speed devices with low series resistances and high cut-off frequencies. Details of the contact-formation processes are provided.<>

Keywords

metallisation; ohmic contacts; semiconductor technology; semiconductor-metal boundaries; alloyed contacts; contact-formation processes; evaporated metal; fabrication; five-layer structure; lightwave devices; linewidth control; low-resistance ohmic contacts; microwave devices; morphology; n-type compound semiconductor layers; p-type compound semiconductor layers; reproducible results; Contact resistance; Fabrication; Gold; Indium phosphide; Metallization; Microwave devices; Ohmic contacts; Substrates; Temperature; Zinc;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.80720

Filename

80720