Title :
Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
Author :
Lee, Sang-Hyun ; Baek, Chang-Ki ; Park, Sooyoung ; Kim, Dong-Won ; Sohn, Dong Kyun ; Lee, Jeong-Soo ; Kim, Dae M. ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters dNW. The current density and the simulation result indicate that the volume inversion as manifested by the spatial charge distribution is enhanced in smaller dNW. The measured noise data are discussed based on the number and correlated mobility fluctuation model. It is shown that the low-frequency noise decreases in smaller dNW. This dNW-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of inversion charges near the Si-SiO2 interface.
Keywords :
current density; elemental semiconductors; field effect transistors; nanowires; semiconductor device noise; silicon; silicon compounds; SNWFET; Si-SiO2; channel diameters; channel-diameter-dependent low-frequency noise; correlated mobility fluctuation model; current density; effective oxide trap density; inversion charges; number model; silicon nanowire field-effect transistor; spatial charge distribution; volume inversion; Educational institutions; Electron traps; Logic gates; Low-frequency noise; Silicon; Transistors; Channel diameter; low-frequency noise; silicon nanowire field-effect transistor (SNWFET); volume inversion;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2209625
