Title :
Buffer layers for high-quality epitaxial YBCO films on Si
Author :
Fork, D.K. ; Fenner, D.B. ; Barrera, A. ; Phillips, J.M. ; Geballe, T.H. ; Connell, G.A.N. ; Boyce, J.B.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Efforts aimed at producing device-quality YBa/sub 2/Cu/sub 3/O/sub 7- delta / (YBCO) films on Si, which have resulted in films with properties comparable to what can be achieved with conventional oxide substrates such as SrTiO/sub 3/, are described. It is reported how epitaxial YBCO films were grown on Si
Keywords :
barium compounds; channelling; critical current density (superconductivity); high-temperature superconductors; strip lines; superconducting epitaxial layers; superconducting transition temperature; vapour phase epitaxial growth; yttrium compounds; 250 to 300 muohmcm; 300 K; 4.2 K; 77 K; 86 to 88 K; Si; YBa/sub 2/Cu/sub 3/O/sub 7- delta /-Y/sub 2/O/sub 3/ZrO/sub 2/-Si; channeling minimum yield; critical current densities; critical temperature; crystalline perfection; epitaxial YBCO films; far-infrared bolometers; high temperature superconductor; in situ process; in situ reaction patterned microstrip lines; intermediate buffer; ion channeling; noise; normal state resistivity; pulsed laser deposition; transition width; Buffer layers; Conductivity; Critical current density; Crystallization; Optical pulses; Pulsed laser deposition; Semiconductor films; Substrates; Temperature; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
