DocumentCode :
1274514
Title :
Integrated RF components in a SiGe bipolar technology
Author :
Burghartz, Joachim N. ; Soyuer, Mehmet ; Jenkins, Keith A. ; Kies, Michael ; Dolan, Margaret ; Stein, Kenneth J. ; Malinowski, John ; Harame, David L.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
32
Issue :
9
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
1440
Lastpage :
1445
Abstract :
Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of ~0.15-80 nH with typical maximum quality-factors (Qmax ) of 3-20. The Qmax´s are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Qmax at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Q´s of ~20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q´s of ~80/f (GHz)/C(pF), and varactors with a 40% tuning range have Q´s of ~70/f (GHz)/C(pF). Those devices can he modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter
Keywords :
Ge-Si alloys; MIM devices; MOS capacitors; Q-factor; UHF filters; UHF integrated circuits; band-pass filters; bipolar MMIC; bipolar analogue integrated circuits; inductors; microwave filters; passive filters; semiconductor materials; transceivers; varactors; MIM capacitors; MOS capacitors; Si; SiGe-Si; analogue bipolar technology; inductance values; inductor area; lumped-element model; monolithic RF transceivers; passive-element bandpass filter; quality factors; spiral inductors; varactors; Doping; Germanium silicon alloys; Inductance; Inductors; MOS capacitors; Manufacturing processes; Radio frequency; Silicon germanium; Spirals; Transceivers;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.628759
Filename :
628759
Link To Document :
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