Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

Author

Groves, Rob ; Harame, David L. ; Jadus, Dale

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1455

Lastpage

1459

Abstract

The behavior of on-chip, planar, spiral inductors fabricated over a conductive silicon substrate has been characterized over the temperature range from -55°C to +125°C. Quality factor (Q) was observed to decrease with increasing temperature at low frequency and increase with increasing temperature at high frequency. Inductance was seen to vary little over the temperature and frequency range. A SPICE model that incorporated the temperature dependence of the inductor´s parasitics was presented and shown to give excellent agreement with measured data over the full temperature and frequency range

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC; Q-factor; SPICE; inductors; semiconductor materials; -55 to 125 degC; BiCMOS technology; SPICE model; Si; SiGe-Si; parasitics; quality factor; spiral inductors; temperature dependence; Conductivity; Electrical resistance measurement; Germanium silicon alloys; Inductance; Inductors; Parasitic capacitance; RLC circuits; Silicon germanium; Spirals; Temperature dependence;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628763

Filename

628763