Title :
High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate
Author :
Tu, Der-Wei ; Wang, Sujane ; Liu, J.S.M. ; Hwang, K.C. ; Kong, Wendell ; Chao, P.C. ; Nichols, Kirby
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
fDate :
11/1/1999 12:00:00 AM
Abstract :
Double-recess power metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates were successfully demonstrated. The In0.53Al0.47As/In0.65Al0.35 As structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that of the InP power HEMT. Excellent maximum power added efficiency (PAE) of 60.2% with output power of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz. A maximum output power of 0.51 W/mm has also been demonstrated with the device. This is the first demonstration of high-efficiency K-band power MHEMT´s
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; 1050 mS/mm; 17.1 dB; 20 GHz; 60.2 percent; 8.3 V; GaAs; GaAs substrate; In0.53Al0.47As-In0.65Al0.35 As; InAlAs/InGaAs power HEMT; breakdown voltage; double-recessed HEMT; extrinsic transconductance; high electron mobility transistors; high-efficiency K-band power MHEMT; maximum power added efficiency; power gain; power metamorphic HEMT; Electric breakdown; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Power generation; Transconductance; mHEMTs;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
