Title :
360×360 element three-phase very high frame rate burst image sensor: design, operation and performance
Author :
Kosonocky, Walter F. ; Yang, Guang ; Kabra, Rakesh K. ; Ye, Chao ; Pektas, Zeynep ; Lowrance, John L. ; Mastrocola, Vincent J. ; Shallcross, Frank V. ; Patel, Vipulkumar
Author_Institution :
Electron. Imaging Center, New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
Design, fabrication, operation and performance are described for a 360×360 element very high frame rate (VHFR) image sensor that can capture images at a frame rate of up to 106 frames/s. This VHFR imager has 50×50 μm macropixels, each consisting of a high-speed zero-lag photodetector with a 13.5% fill factor and 30 stages of serial-parallel type buried-channel CCD registers for storage and readout of the last 30 image frames acquired. Readout of this imager is similar to a frame transfer CCD consisting of four quadrants. Each quadrant contains one million pixels, readout at a relatively slow rate compatible with low readout noise, and PC class microcomputer-based data acquisition and storage. This imager is designed using SiO2/Si3N4 gate dielectric, four levels of polysilicon, three levels of metal, eight implants, 21 photo masks using 1.5-μm design rules, and it has four output ports. The high-speed photodetector is designed in the form of a graded three-potential-level pinned-buried BCCD structure. This 33-μm long photodetector can achieve complete readout of photogenerated electrons in less than 0.1 μs
Keywords :
CCD image sensors; elemental semiconductors; integrated circuit noise; masks; photodetectors; silicon; 0.1 mus; 1.5 micron; 33 micron; 50 micron; SiO2-Si3N4; VHFR imager; burst image sensor; fill factor; frame rate; gate dielectric; high-speed zero-lag photodetector; image frames; output ports; photo masks; photogenerated electrons; polysilicon; readout noise; serial-parallel type buried-channel CCD registers; three-phase image sensor; three-potential-level pinned-buried BCCD; Chaos; Charge coupled devices; Dielectrics; Fabrication; Image sensors; Image storage; Instruments; Photodetectors; Pixel; Sensor phenomena and characterization;
Journal_Title :
Electron Devices, IEEE Transactions on