Title :
Soft-X-ray CCD imagers for AXAF
Author :
Burke, Barry E. ; Gregory, J.A. ; Bautz, M.W. ; Prigozhin, G.Y. ; Kissel, S.E. ; Kosicki, Bernard B. ; Loomis, Andrew H. ; Young, Douglas J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
We describe the key features and performance data of a 1024×1026-pixel frame-transfer imager for use as a soft-X-ray detector on the NASA X-ray observatory Advanced X-ray Astrophysics Facility (AXAF). The four-port device features a floating-diffusion output circuit with a responsivity of 20 μV/e- and noise of about 2 e- at a 100-kHz data rate. Techniques for achieving the low sense-node capacitance of 5 fF are described. The CCD is fabricated on high-resistivity p-type silicon for deep depletion and includes narrow potential troughs for transfer inefficiencies of around 10-7. To achieve good sensitivity at energies below 1 keV, we have developed a back-illumination process that features low recombination losses at the back surface and has produced quantum efficiencies of about 0.7 at 277 eV (carbon Kα)
Keywords :
CCD image sensors; X-ray astronomy; X-ray detection; X-ray imaging; artificial satellites; astronomical instruments; electron-hole recombination; elemental semiconductors; silicon; 100 kHz; 1024 pixel; 1026 pixel; 1050624 pixel; 277 eV; 5 fF; AXAF; Advanced X-ray Astrophysics Facility; NASA X-ray observatory; Si; back-illumination process; floating-diffusion output circuit; four-port device; frame-transfer imager; high-resistivity p-type semiconductor; low sense-node capacitance; potential troughs; quantum efficiencies; recombination losses; responsivity; soft-X-ray CCD imagers; transfer inefficiencies; Astrophysics; Capacitance; Charge coupled devices; Circuit noise; NASA; Observatories; Silicon; X-ray detection; X-ray detectors; X-ray imaging;
Journal_Title :
Electron Devices, IEEE Transactions on