Title :
Dark current fixed pattern noise reduction for the 2/3-in two-million pixel HDTV STACK-CCD imager
Author :
Sakaguchi, Natsue ; Nakamura, Nobuo ; Ohsawa, Shinji ; Endo, Yukio ; Matsunaga, Yoshiyuki ; Ooi, Kazushige ; Yoshida, Okio
Author_Institution :
Video Digital LSI Design Sect., Toshiba Corp., Kawasaki, Japan
fDate :
10/1/1997 12:00:00 AM
Abstract :
The fixed pattern noise reduction methods, surrounding channel stop structure and the hole accumulation operation, are proposed and evaluated for the 2/3-in two-million pixel STACK-CCD HDTV imager. The surrounding channel stop structure is surrounded by the channel stop region to suppress the fluctuation of the mean dark current from Si-SiO 2 interface and the depletion layer of p-n junction. The measured fixed pattern note (FPN) and signal-to-noise (S/N) ratio are improved from 45 electrons down to 19 electrons and from 49 dB up to 54 dB under the condition of F.8 and 2000 lux at 333 K, respectively. Therefore, the 2/3-in two-million pixel HDTV handy-type color camera with high S/N ratio and low FPN can be obtained
Keywords :
CCD image sensors; dark conductivity; high definition television; semiconductor device noise; television cameras; 0.667 in; 2 Mpixel; 333 K; HDTV STACK-CCD imager; S/N ratio; Si-SiO2; channel stop structure; dark current fixed pattern noise; depletion layer; handy-type color camera; hole accumulation operation; mean dark current; noise reduction; Boron; Cameras; Colored noise; Dark current; Electrodes; Electrons; HDTV; Noise reduction; Pixel; Signal to noise ratio;
Journal_Title :
Electron Devices, IEEE Transactions on
