Temperature and optical characteristics of tin oxide membrane gate ISFET

Author

Liao, Hung-Kwei ; Yang, En-Shieh ; Chou, Jung-Chuan ; Chung, Wen-Yaw ; Sun, Tai-Ping ; Hsiung, Shen-Kan

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung Li, Taiwan

Volume

46

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2278

Lastpage

2281

Abstract

The influence of temperature and optical effects on ISFET performance are important. In this study, the temperature characteristics of the SnO₂/Si₃N₄/SiO ₂/Si ISFET are investigated by the zero temperature coefficient (T.C.) adjustment and the dual FET´s configuration, respectively. The result show that a zero T.C. of the SnO₂ gate ISFET can be achieved when the appropriate operation current was set. Subsequently, the T.C. of tin oxide membrane/electrolyte interface can be evaluated by the dual FETs configuration. On the other hand, due to the SnO₂ gate ISFET is sensitive to the light exposure, thus in order to improve this drawback, a multi-structure ISFETs: SnO ₂/Al/SiO₂/Si₃N₄/Si ISFETs have been developed. In this structure, aluminum is used as a light shield, and the tin oxide is used as a pH sensitive layer. The results show the ISFETs with aluminum as a light shield have low light sensitivity compared with ISFETs without aluminum as a light shield

Keywords

ion sensitive field effect transistors; membranes; semiconductor materials; tin compounds; ISFET; SnO₂-Al-SiO₂-Si₃N₄-Si; SnO₂-Si₃N₄-SiO₂-Si; aluminum light shield; dual FET; optical characteristics; pH sensitive layer; temperature characteristics; tin oxide membrane/electrolyte interface; zero temperature coefficient; Aluminum; Biomembranes; Chemicals; FETs; Optical films; Optical materials; Optical sensors; Sun; Temperature sensors; Tin;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.808051

Filename

808051