Title :
An epitaxially-grown charge modulation device
Author :
Reich, Robert K. ; Mountain, Robert W. ; Robinson, McDonald ; McGonagle, William H. ; Loomis, Andrew H. ; Kosicki, Bernard B. ; Savoye, Eugene D.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
A charge modulation device (CMD) has been fabricated in a p-type epitaxial layer grown from the buried-channel silicon region of a charge-coupled device (CCD). Construction of the CMD directly above the CCD buried-channel and over the oxidized CCD transfer gates lowers the effective sense capacitance while providing isolation of the CMD source/drain regions. Responsivity values of 28 and 66 μV/e for feedback and no feedback conditions, respectively, were measured dynamically on test devices. Input-referred noise values of approximately four electrons r.m.s. were calculated from noise spectral density measurements assuming a low-pass filter 3 dB cutoff frequency of 5 MHz and correlated double sampling
Keywords :
CCD image sensors; capacitance; feedback; integrated circuit noise; junction gate field effect transistors; modulation; semiconductor epitaxial layers; signal sampling; silicon; 5 MHz; CCD buried-channel; JFET device; Si; buried-channel silicon regio; charge-coupled device; correlated double sampling; epitaxially-grown charge modulation device; feedback; noise spectral density measurements; oxidized CCD transfer gates; p-type epitaxial layer; sense capacitance reduction; Capacitance; Charge coupled devices; Cutoff frequency; Density measurement; Electrons; Epitaxial layers; Feedback; Low pass filters; Silicon; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
