Title :
Interface properties of NO-annealed N2O-grown oxynitride
Author :
Lai, P.T. ; Xu, J.P. ; Cheng, Y.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
12/1/1999 12:00:00 AM
Abstract :
The oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2
Keywords :
annealing; hot carriers; nitridation; oxidation; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; N2O; N2O growth; NO; NO annealing; SIMS; Si-SiO2; SiON; gate dielectric; hot carrier stress; nitridation; oxidation; oxide/Si interface; oxynitride film; Annealing; Capacitors; Dielectrics; Electron traps; Hot carriers; MOSFETs; Nitrogen; Oxidation; Thermal stresses; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
