• DocumentCode
    1275226
  • Title

    Interface properties of NO-annealed N2O-grown oxynitride

  • Author

    Lai, P.T. ; Xu, J.P. ; Cheng, Y.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • Volume
    46
  • Issue
    12
  • fYear
    1999
  • fDate
    12/1/1999 12:00:00 AM
  • Firstpage
    2311
  • Lastpage
    2314
  • Abstract
    The oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2
  • Keywords
    annealing; hot carriers; nitridation; oxidation; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; N2O; N2O growth; NO; NO annealing; SIMS; Si-SiO2; SiON; gate dielectric; hot carrier stress; nitridation; oxidation; oxide/Si interface; oxynitride film; Annealing; Capacitors; Dielectrics; Electron traps; Hot carriers; MOSFETs; Nitrogen; Oxidation; Thermal stresses; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.808070
  • Filename
    808070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1275226