Title :
Wide intrascene dynamic range CMOS APS using dual sampling
Author :
Yadid-Pecht, Orly ; Fossum, Eric R.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
A CMOS active pixel sensor (APS) that achieves wide intrascene dynamic range using dual sampling is reported. A 64×64 element prototype sensor with dual output architecture was fabricated using a 1.2 μm n-well CMOS process with 20.4 μm pitch photodiode-type active pixels. The sensor achieves an intrascene dynamic range of 109 dB without nonlinear companding
Keywords :
CMOS integrated circuits; image sensors; photodiodes; signal sampling; 1.2 micron; 20.4 micron; 4096 pixel; 64 pixel; CMOS active pixel sensor; dual output architecture; dual sampling; n-well CMOS process; photodiode-type active pixels; wide intrascene dynamic range; Capacitors; Charge coupled devices; Colored noise; Dynamic range; Layout; Lighting; Mechanical sensors; Noise measurement; Sampling methods; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
