A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates

Author

Brodsky, Jonathan S. ; Fox, Robert M. ; Zweidinger, David T.

Author_Institution

Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA

Volume

46

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2333

Lastpage

2339

Abstract

A physics-based compact model for the thermal impedance of vertical bipolar transistors, fabricated with full dielectric isolation, is presented. The model compares favorably to both three dimensional (3-D) ANSYS(R) transient simulations and measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal impedance model. The thermal equivalent circuit is used in conjunction with a modified version of SPICE to give efficient electrothermal simulations in the dc and transient regimes

Keywords

SPICE; bipolar transistors; equivalent circuits; isolation technology; semiconductor device models; thermal resistance; transient analysis; SOI substrates; SPICE; Thermal Impedance Pre-Processor; dc regime; electrothermal simulations; full dielectric isolation; multiple-pole circuit; physics-based dynamic thermal impedance model; software package; thermal equivalent circuit; transient regime; vertical bipolar transistors; Bipolar transistors; Circuit simulation; Dielectric substrates; Electrothermal effects; Equivalent circuits; Finite element methods; Impedance; Predictive models; SPICE; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.808075

Filename

808075