Title :
A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode
Author :
Ruden, Paul P. ; Krishnankutty, Subash
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
12/1/1999 12:00:00 AM
Abstract :
A novel, hybrid III-Nitride/Si, ultraviolet (UV) avalanche photodiode (APD) is proposed. The device combines the favorable short wavelength interband absorption properties of the direct bandgap III-Nitride material with the unique impact ionization characteristics of silicon. Solar blind response is achieved through optical isolation of the multiplication region of the device
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; impact ionisation; silicon; ultraviolet detectors; wide band gap semiconductors; AlGaN-Si; AlGaN/Si hybrid ultraviolet avalanche photodiode; direct bandgap III-V nitride material; impact ionization characteristics; multiplication region; optical isolation; short wavelength interband absorption properties; solar blind response; Avalanche photodiodes; Charge carrier processes; Detectors; Electromagnetic wave absorption; Gallium nitride; Impact ionization; Optical filters; Photodetectors; Photonic band gap; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
