Title :
Analysis of GaAs OPFET with improved optical absorption under back illumination
Author :
Roy, Nandita Saha ; Pal, B.B. ; Khan, R.U.
Author_Institution :
Inst. of Technol., Banaras Hindu Univ., Varanasi, India
fDate :
12/1/1999 12:00:00 AM
Abstract :
The effect of back illumination with improved optical absorption has been analyzed for an ion-implanted GaAs OPFET considering the Pearson IV distribution of impurities. Plots have been made for two photo voltages developed across the substrate active layer junction and the Schottky junction. The drain-source current is significantly enhanced for the device when a fiber is inserted up to the active layer substrate junction compared with the case where the finite substrate effect is taken into account
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; light absorption; phototransistors; semiconductor device models; GaAs; GaAs OPFET; Pearson IV impurity distribution; Schottky junction; back illumination; drain-source current; finite substrate effect; ion implantation; optical absorption; photo voltages; substrate active layer junction; Charge carrier processes; Detectors; Electromagnetic wave absorption; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Impact ionization; Lighting; Optical superlattices; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
