DocumentCode :
1275280
Title :
CMOS active pixel sensor with on-chip successive approximation analog-to-digital converter
Author :
Zhou, Zhimin ; Pain, Bedabrata ; Fossum, Eric R.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
44
Issue :
10
fYear :
1997
fDate :
10/1/1997 12:00:00 AM
Firstpage :
1759
Lastpage :
1763
Abstract :
The first CMOS active pixel sensor (APS) with on-chip column-parallel successive-approximation analog-to-digital converter (ADC) is reported. A 64×64 element CMOS APS implemented in a 1.2-μm n-well single-poly, double-metal process with 24-μm pixel pitch is integrated with a 64×1 array of column parallel successive approximation 8-b ADCs. Good image quality was observed. The capacitively-coupled ADCs dissipate approximately 1 μW-s/ksample and occupy 0.05 mm2 of chip area
Keywords :
CMOS integrated circuits; analogue-digital conversion; image resolution; image sensors; integrated circuit design; integrated circuit measurement; 1.2 mum; 24 mum; 4096 pixel; 64 pixel; ADC array; CMOS active pixel sensor; capacitively-coupled ADC; chip area; image quality; n-well single-poly double-metal process; on-chip column-parallel successive-approximation ADC; on-chip successive approximation analog-to-digital converter; pixel pitch; Analog-digital conversion; CMOS image sensors; CMOS process; CMOS technology; Crosstalk; Image quality; Image sensors; Pain; Sensor arrays; Space technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.628833
Filename :
628833
Link To Document :
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