Title :
A CMOS imager hybridized to an avalanche multiplied film
Author :
Takiguchi, Yoshiro ; Maruyama, Hirotaka ; Kosugi, Mitsuo ; Andoh, Fumihiko ; Kato, Tsutomu ; Tanioka, Kenkichi ; Yamazaki, Junichi ; Tsuji, Kiyotaka ; Kawamura, Tatsuro
Author_Institution :
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
fDate :
10/1/1997 12:00:00 AM
Abstract :
A highly sensitive solid-state imager has been made by connecting an avalanche multiplier film to a MOS readout circuit through microbump electrodes. Optimization of the vapor-deposition conditions for the indium bump material made it possible for microbumps 5 μm in diameter and 5 μm in height to be formed into a 2/3-in matrix array of 380 000 pixels. A prototype imager was constructed with a 0.5-μm thick avalanche photoconductive film. Clear avalanche multiplication of about ten times was observed at an applied voltage of 75 V. The imager had a good resolution and no recognizable afterimages
Keywords :
CMOS integrated circuits; avalanche breakdown; image resolution; image sensors; microassembling; nondestructive readout; photoconducting devices; 0.5 mum; 380000 pixel; 5 mum; 75 V; CMOS imager; HARP; In; In bump material; MOS readout circuit; avalanche multiplied film; avalanche photoconductive film; high-gain avalanche rushing amorphous photoconductor; highly sensitive solid-state imager; microbump electrodes; pixel matrix array; resolution; vapor-deposition conditions optimization; CMOS image sensors; Electrodes; Image resolution; Indium; Joining processes; Photoconducting materials; Photoconductivity; Prototypes; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
