Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

A report on the theoretical study of an integrated waveguide/photodetector is presented. The optical modeling is presented of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer which is deposited on the waveguiding layer. From this modeling, the expression of the electron-hole pair generation rate for such a device is established. This result is applied to the calculation of the dynamic quantum efficiency of an integrated waveguide/p-i-n photodiode. The static and dynamic behaviors of GaInAs p-i-n photodiodes monolithically integrated on a classical N^-/n⁺ InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed, and optimized structures are pointed out