DocumentCode :
1275590
Title :
Comprehensive static characterization of vertical electrostatically actuated polysilicon beams
Author :
Chan, Edward K. ; Garikipati, Krishna ; Dutton, Robert W.
Author_Institution :
Stanford Univ., CA, USA
Volume :
16
Issue :
4
fYear :
1999
Firstpage :
58
Lastpage :
65
Abstract :
This article unifies two parameter-extraction methods to generate a consistent simulation model calibrated to multi-user microelectromechanical systems processes (MUMPS). The simulation model is calibrated to optical (buckling amplitude) and electrical (pull-in voltage) measurements concurrently, not independently, thus increasing confidence in the extracted parameters. A simulation-based model consisting of geometrical and material property information precludes the need for ad hoc parametric adjustments and simplifying assumptions. The calibration steps consist of identifying relevant simulation model parameters, designing suitable test structures, measuring geometry, then extracting parameters using detailed, yet fast electromechanical simulations, and finally extrapolating the behavior of an actual complex device. This article targets electrostatically actuated beams fabricated in the Poly1 layer, although the model parameters can be used to simulate other devices
Keywords :
electrostatic actuators; Poly1 layer; buckling amplitude; comprehensive static characterization; consistent simulation model; electrostatically actuated beams; model parameters; multi-user microelectromechanical systems processes; parameter-extraction methods; simulation model; simulation-based model; vertical electrostatically actuated polysilicon beams; Calibration; Data mining; Electric variables measurement; Electrostatic measurements; Geometrical optics; Material properties; Microelectromechanical systems; Nonlinear optics; Solid modeling; Voltage measurement;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/54.808212
Filename :
808212
Link To Document :
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