DocumentCode
1275590
Title
Comprehensive static characterization of vertical electrostatically actuated polysilicon beams
Author
Chan, Edward K. ; Garikipati, Krishna ; Dutton, Robert W.
Author_Institution
Stanford Univ., CA, USA
Volume
16
Issue
4
fYear
1999
Firstpage
58
Lastpage
65
Abstract
This article unifies two parameter-extraction methods to generate a consistent simulation model calibrated to multi-user microelectromechanical systems processes (MUMPS). The simulation model is calibrated to optical (buckling amplitude) and electrical (pull-in voltage) measurements concurrently, not independently, thus increasing confidence in the extracted parameters. A simulation-based model consisting of geometrical and material property information precludes the need for ad hoc parametric adjustments and simplifying assumptions. The calibration steps consist of identifying relevant simulation model parameters, designing suitable test structures, measuring geometry, then extracting parameters using detailed, yet fast electromechanical simulations, and finally extrapolating the behavior of an actual complex device. This article targets electrostatically actuated beams fabricated in the Poly1 layer, although the model parameters can be used to simulate other devices
Keywords
electrostatic actuators; Poly1 layer; buckling amplitude; comprehensive static characterization; consistent simulation model; electrostatically actuated beams; model parameters; multi-user microelectromechanical systems processes; parameter-extraction methods; simulation model; simulation-based model; vertical electrostatically actuated polysilicon beams; Calibration; Data mining; Electric variables measurement; Electrostatic measurements; Geometrical optics; Material properties; Microelectromechanical systems; Nonlinear optics; Solid modeling; Voltage measurement;
fLanguage
English
Journal_Title
Design & Test of Computers, IEEE
Publisher
ieee
ISSN
0740-7475
Type
jour
DOI
10.1109/54.808212
Filename
808212
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