Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility μ_sat, whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltage V_th. We therefore obtain excellent device characteristics at 350°C with μ_sat of 1.57 cm²/V ·s, V_th of 1.28 V, an on/off ratio of ~1.4 × 10⁷, and a subthreshold gate swing of 0.59 V/dec.