An analytical approach to study the effect of carrier velocities on the gain and breakdown voltage of avalanche photodiodes

Author

Banoushi, A. ; Ahmadi, V. ; Setayeshi, S.

Author_Institution

Faculties of Phys. & Nucl. Sci., Amir Kabir Univ., Tehran, Iran

Volume

20

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

696

Lastpage

699

Abstract

A simplified model for calculating gain and breakdown voltage of avalanche photodiodes (APDs) having constant ionization coefficients in their multiplication layer is presented. Good agreement is seen between the calculated results and the experimental data for published InP-InGaAs separate absorption, grading, charge, and multiplication (SAGCM) APDs. The model denotes that the gain and the breakdown voltage have a dependence on the carrier velocity ratio that is not predicted by conventional models. Hence, by comparing the calculated and measured static characteristics of the APD, one can estimate the velocity of minority carriers in the multiplication region of the device

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; photoionisation; semiconductor device models; InP-InGaAs; InP-InGaAs SAGCM APDs; InP-InGaAs separate absorption grading charge and multiplication APDs; analytical approach; avalanche photodiode gain; breakdown voltage; carrier velocities; carrier velocity ratio; constant ionization coefficients; minority carriers; multiplication layer; multiplication region; simplified model; static characteristics; Absorption; Avalanche photodiodes; Charge carrier processes; Impact ionization; Optical fiber communication; Optoelectronic devices; Predictive models; Resonance; Velocity measurement; Wavelength measurement;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.996591

Filename

996591