Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

Author

Zhou, Wei ; Meng, Zhiguo ; Zhao, Shuyun ; Zhang, Meng ; Chen, Rongsheng ; Wong, Man ; Kwok, Hoi-Sing

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

33

Issue

10

fYear

2012

Firstpage

1414

Lastpage

1416

Abstract

Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

Keywords

cryogenic electronics; elemental semiconductors; silicon; thin film transistors; BG conduction; Si; bridged-grain technique; high drain electric held; improved current flow; leakage current; low-temperature solid-phase-crystallized thin film transistors; maximum held-effect mobility; on-off ratio; polycrystalline-silicon thin-film transistors; subthreshold slope; threshold voltage; Crystallization; Grain size; Leakage current; Silicon; Thin film transistors; Bridged grain (BG); polycrystalline silicon (poly-Si); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2210019

Filename

6290340