DocumentCode :
1276234
Title :
Polarized Emission From InGaN Light-Emitting Diodes With Self-Assembled Nanosphere Coatings
Author :
Zhang, Qian ; Li, Kwai Hei ; Choi, Hoi Wai
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
24
Issue :
18
fYear :
2012
Firstpage :
1642
Lastpage :
1645
Abstract :
The polarization behavior of light emission from InGaN light-emitting diodes (LEDs) with nanosphere opal coatings has been studied. The close-packed nanosphere opal films are self-assembled with 220-nm polystyrene nanospheres onto the LEDs. The optical transmission properties of transverse electric and transverse magnetic polarized light have been measured as a function of detection angle; an integrated p/s ratio of 2.2 has been obtained at a detection angle of 70°. The polarization of light propagating through the opal film is strongly related to the photonic bandgap of the 3-D photonic crystal and is also dependent upon the angle of incidence. Theoretical calculations by the transfer matrix method are found to be consistent with the measured results.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; optical films; photonic band gap; self-assembly; wide band gap semiconductors; InGaN; LED; light emitting diodes; light propagating polarization; nanosphere opal coating; optical transmission; photonic bandgap; polarized emission; self-assembled nanosphere coatings; size 220 nm; transfer matrix method; Coatings; Lattices; Light emitting diodes; Optical polarization; Photonic crystals; Self-assembly; Wavelength measurement; Light-emitting diodes (LEDs); nanosphere; polarization;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2211586
Filename :
6290386
Link To Document :
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