Title :
A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz
Author :
Simbürger, Werner ; Wohlmuth, Hans-Dieter ; Weger, Peter ; Heinz, Alexander
Author_Institution :
Circuits Dept., Infineon Technol. AG, Munich, Germany
fDate :
12/1/1999 12:00:00 AM
Abstract :
This paper presents the circuit design and application of a monolithically integrated silicon radio-frequency power amplifier for 0.8-1 GHz. The chip is fabricated in a 25-GHz-fT silicon bipolar production technology (Siemens B6HF). A maximum output power of 5 W and maximum efficiency of 59% is achieved. The chip is operating from 2.5 to 4.5 V. The linear gain is 36 dB. The balanced two-stage circuit design is based fundamentally on three on-chip transformers. The driver stage and the output stage are connected in common-emitter configuration. The input signal can be applied balanced or single-ended if one input terminal is grounded. One transformer at the input acts as balun as well as input matching network. Two transformers acts as interstage matching network
Keywords :
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; equivalent circuits; high-frequency transformers; impedance matching; integrated circuit design; silicon; 0.8 to 1 GHz; 0.9 GHz; 2.5 to 4.5 V; 36 dB; 5 W; 59 percent; Si; Si bipolar production technology; Siemens B6HF; balanced two-stage circuit design; balun; circuit design; common-emitter configuration; driver stage; input matching network; interstage matching network; monolithic transformer coupled power amplifier; onchip transformers; output stage; Circuit synthesis; Coupling circuits; Impedance matching; Integrated circuit technology; Power amplifiers; Power generation; Production; Radio frequency; Radiofrequency amplifiers; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
