High-speed distributed feedback laser and InGaAs avalanche photodiodes

Author

Imai, Hajime ; Kaneda, Takao

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

6

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1634

Lastpage

1642

Abstract

Optical semiconductor devices, including InGaAsP/InP distributed feedback lasers and InGaAs avalanche photodiodes, are required for high-bit-rate transmission systems. In distributed-feedback lasers, it is important to increase the 3-dB bandwidth, to reduce the frequency chirping, and to stabilize the longitudinal mode under large signal modulation. For avalanche photodiodes, high gain-bandwidth product, low multiplication noise, low multiplied dark current, and low capacitance are key factors. How to realize these characteristics is discussed

Keywords

III-V semiconductors; avalanche photodiodes; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; III-V semiconductors; InGaAs; InGaAsP-InP; avalanche photodiodes; capacitance; dark current; distributed feedback laser; frequency chirping; high-bit-rate transmission systems; multiplication noise; optical semiconductor devices; signal modulation; Avalanche photodiodes; Distributed feedback devices; High speed optical techniques; Indium gallium arsenide; Laser feedback; Laser modes; Laser noise; Optical devices; Optical feedback; Semiconductor lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.9979

Filename

9979