DocumentCode :
1277030
Title :
An empirical table-based FET model
Author :
Angelov, Iltcho ; Rorsman, Niklas ; Stenarson, Jörgen ; Garcia, Mikael ; Zirath, Herbert
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Volume :
47
Issue :
12
fYear :
1999
fDate :
12/1/1999 12:00:00 AM
Firstpage :
2350
Lastpage :
2357
Abstract :
A new large-signal FET model combining empirical and table-based models was developed and investigated experimentally. The Chalmers empirical model was used as an envelope for the measured data for main parameters of the model. Combining empirical and table-based models improves accuracy and simplifies as well as speeds extraction. The procedure can be applied for other types of devices
Keywords :
equivalent circuits; field effect transistors; microwave field effect transistors; semiconductor device models; Chalmers empirical model; empirical table-based FET model; large-signal FET model; Circuit simulation; Data mining; Design optimization; Equations; Europe; FETs; HEMTs; Microwave technology; Predictive models; Spline;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.808981
Filename :
808981
Link To Document :
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