Title :
Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 μm wavelength optical communication use
Author :
Taguchi, Kenko ; Torikai, Toshitaka ; Sugimoto, Yoshimasa ; Makita, Kikuo ; Ishihara, Hisahiro
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
11/1/1988 12:00:00 AM
Abstract :
A planar InP-based InGaAs heterostructure avalanche photodiode (APD) with a preferential lateral extended guard ring is proposed. Optimum design and device fabrication are described for the planar-structure APD using various-donor-concentration n-InP avalanche layers, separated from the light-absorbing InGaAs layer. High performance results are low dark current, high speed, low noise, and uniform avalanche gain without edge breakdown. The APD yielded a sensitivity as high as -37.4 dBm for a 2-Gb/s 1.57-μm wavelength return-to-zero sequence with 10-9 bit error rate
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; 1.0 to 1.6 micron; APD; III-V semiconductors; InP-InGaAsP-InGaAs; avalanche gain; avalanche photodiodes; dark current; edge breakdown; error rate; lateral extended guard ring; noise; optical communication use; Avalanche photodiodes; Dark current; Fabrication; Impurities; Indium gallium arsenide; Indium phosphide; National electric code; Optical fiber communication; Optical noise; Tunneling;
Journal_Title :
Lightwave Technology, Journal of
