AlN/ZnO/diamond waveguiding layer acoustic wave structure: Theoretical and experimental results

Author

Le Brizoual, L. ; Elmazria, Omar ; Zhgoon, Sergei ; Soussou, Akram ; Sarry, Frederic ; Djouadi, Mohammed Abdou

Author_Institution

Centre Nat. de la Rech. Sci., Univ. Nantes, Nantes, France

Volume

57

Issue

8

fYear

2010

fDate

8/1/2010 12:00:00 AM

Firstpage

1818

Lastpage

1824

Abstract

We present a theoretical calculation and experimental results for a waveguiding layer acoustic wave (WLAW). The experimental device is modeled by the finite element method (FEM) for the AlN/ZnO/diamond structure. It was found that the AlN thickness must be at least larger than 3λ/2 to obtain negligible surface displacement. In the same way, the ZnO thickness for a fixed value of AlN thickness at 2λ must be larger than λ/4 to confine the acoustic wave. The electromechanical coupling of the wave presents an optimum around λ/2 for the ZnO layer thickness. A first experimental AlN/ZnO/diamond device has been developed and shows the WLAW at 412 MHz.

Keywords

acoustic waveguides; aluminium compounds; diamond; electromechanical effects; finite element analysis; interface structure; zinc compounds; AlN-ZnO-C; electromechanical coupling; finite element method; frequency 412 MHz; surface displacement; waveguiding layer acoustic wave structure; Acoustic waves; Finite element methods; Surface acoustic wave devices; Zinc oxide;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2010.1620

Filename

5529470