• DocumentCode
    1277574
  • Title

    New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration

  • Author

    Brillouet, F. ; Rao, E.V.K. ; Beerens, J.

  • Author_Institution
    Lab. de Bagneux, CNET
  • Volume
    24
  • Issue
    2
  • fYear
    1988
  • fDate
    1/21/1988 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    99
  • Abstract
    A transverse junction stripe laser structure with a very low parasitic capacitance, compatible with an entirely planar laser-MESFET integration, is presented. The laser, obtained by two successive n (S) and p(Zn) diffusions across undoped AlGaAs/GaAs double heterostructure layers, has a threshold current of Ith =55 mA. A very low parasitic capacitance Cs=0.6 pF is measured, with a corresponding rolloff time constant of tr=9 ps
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; 0.6 pF; 55 mA; 9 ps; AlGaAs-GaAs:S,Zn; III-V semiconductors; OEIC; TJS type; integrated optoelectronics; low capacitance; planar laser-MESFET integration; rolloff time constant; semiconductor lasers; successive diffusions; threshold current; transverse junction stripe;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1277574