Title :
High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications
Author :
Ghosh, Dipankar ; Parihar, Mukta Singh ; Armstrong, G. Alastair ; Kranti, Abhinav
Author_Institution :
Low Power Nanoelectron. Res. Group, Indian Inst. of Technol. (IIT) Indore, Indore, India
Abstract :
In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current (Ids) of 10 μA/μm, JL devices achieve two times higher values of cutoff frequency (fT) and maximum oscillation frequency (fMAX) along with 65% improvement in voltage gain (AVO) in comparison to conventional nonunderlap MOSFETs. ULP JL devices, which do not require source/drain (S/D) profile optimization, can perform comparably to underlap devices, thereby relaxing the stringent process constraints associated with S/D profile optimization in nanoscale devices. The results highlight new opportunities for realizing future ULP analog/RF design with JL transistors.
Keywords :
MOSFET; analogue circuits; low-power electronics; microwave field effect transistors; optimisation; S-D profile optimization; ULP JL MOSFET; ULP JL devices; ULP analog-RF design; high-performance junctionless MOSFET; improved analog-RF metrics; maximum oscillation frequency; nanoscale devices; nonunderlap MOSFET; source-drain profile optimization; stringent process constraints; ultralow-power junctionless MOSFET; ultralowpower analog-RF applications; voltage gain; Capacitance; Cutoff frequency; Logic gates; MOSFETs; Performance evaluation; Radio frequency; Analog/RF; double-gate MOSFET; junctionless (JL) transistor; ultralow power (ULP); underlap source/drain (S/D);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2210535
