مرکز منطقه ای اطلاع رساني علوم و فناوري - Multiresistance Characteristics of PCRAM With <formula formulatype="inline"> <img src="/images/tex/20481.gif" alt=" \\hbox {Ge}_{1}\\hbox {Cu}_{2}\\hbox {Te}_{3}"> </formula> and <formula formulatype="inline"> <img src="/images/tex/20482.gif" alt="\\hbox

Title :

Multiresistance Characteristics of PCRAM With $\\hbox {Ge}_{1}\\hbox {Cu}_{2}\\hbox {Te}_{3}$ and $\\hbox </div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Saito, Yuta ; Song, Yun Heub ; Lee, Jung Min ; Sutou, Yuji ; Koike, Junichi</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1399</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1401</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) and Ge<sub>1</sub>Cu<sub>2</sub>Te<sub>3</sub> (GCT) are utilized as phase-change materials to realize high and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10<sup>3</sup>, 10<sup>4</sup>, and 10<sup>5</sup> Ω were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>antimony compounds; copper compounds; crystallisation; germanium compounds; phase change materials; phase change memories; random-access storage; semiconductor thin films; GCT; GST; Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>; GeCuTe; crystallization temperature; current pulse selection; device structure; melting point; middle-resistance states; multilevel cell operation; multiple PCRAM device; multiresistance characteristics; phase-change materials; phase-change random access memory; Crystallization; Phase change random access memory; Resistance; Stress; Temperature measurement; Writing; <formula formulatype=$ $hbox{Ge}_{1}hbox{Cu}_{2}hbox{Te}_{3}$ (GCT); $hbox{Ge}_{2}hbox{Sb}_{2}hbox{Te}_{5}$ (GST); multilevel cell (MLC); phase-change random access memory (PCRAM);