DocumentCode :
1277645
Title :
44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions
Author :
Xiao, Xi ; Li, Xianyao ; Xu, Hao ; Hu, Yingtao ; Xiong, Kang ; Li, Zhiyong ; Chu, Tao ; Yu, Jinzhong ; Yu, Yude
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Volume :
24
Issue :
19
fYear :
2012
Firstpage :
1712
Lastpage :
1714
Abstract :
We experimentally demonstrate silicon microring modulators with >;40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85× 10-5/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of ~ 8000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
Keywords :
Q-factor; elemental semiconductors; high-speed optical techniques; micro-optics; optical modulation; silicon; Q factor; Si; bandwidth 51 GHz; bit rate 44 Gbit/s; carrier-depletion mechanism; high-speed modulation; modulation speed; photon-lifetime; reverse-biased PN junctions; silicon microring modulators; ultrahigh-capacity optical interconnects; voltage 3 V; zigzag PN junctions; Bandwidth; Junctions; Optical modulation; Optical waveguides; Optimized production technology; Silicon; High speed; microring resonator (MRR); optical modulation; silicon modulators;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2213244
Filename :
6293854
Link To Document :
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