• DocumentCode
    1278009
  • Title

    Electrical Measurement of the Thermal Impedance of Bipolar Transistors

  • Author

    El Rafei, Abdelkader ; Sommet, Raphaël ; Quere, Raymond

  • Author_Institution
    XLIM Lab., Limoges Univ., Brive-la-Gaillarde, France
  • Volume
    31
  • Issue
    9
  • fYear
    2010
  • Firstpage
    939
  • Lastpage
    941
  • Abstract
    In this letter, we present a characterization method for the determination of the thermal impedance of heterostructure bipolar transistors. The thermal impedance was characterized using low-frequency S-parameter measurements. We will show that our method can be used to characterize the thermal impedance independent of the transistor size.
  • Keywords
    S-parameters; bipolar transistors; electric impedance measurement; thermal variables measurement; electrical measurement; heterostructure bipolar transistors; low-frequency S-parameter measurements; thermal impedance; Bipolar transistors; Current measurement; Electric variables measurement; Frequency measurement; Gallium arsenide; HEMTs; Impedance; Impedance measurement; MODFETs; Optical feedback; Performance evaluation; Scattering parameters; Size measurement; Temperature measurement; Transistors; $S$ -parameters; Bipolar transistors; thermal feedback; thermal impedance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2052232
  • Filename
    5530347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1278009